Control techniques for ion beam and deposition rate parameters;

Control techniques for ion beam and deposition rate parameters;

Control techniques for ion beam and deposition rate parameters;

N.B.2 Low-energy ion beams (less than 5 keV) can be used to activate the deposition.

N.B.2 Low-energy ion beams (less than 5 keV) can be used to activate the deposition.

B. 1. f. Equipment specially designed for mask making or semiconductor device processing using deflected focussed electron beam, ion beam or "laser" beam, having any of the following:

Ion Assisted Resistive Heating PVD employs electrically resistive heating sources in combination with impinging ion beam(s) to produce a controlled and uniform flux of evaporated coating species;

b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0.01 µcoulomb/mm2 or better;

Ion Assisted Resistive Heating PVD employs electrically resistive heating sources in combination with impinging ion beam(s) to produce a controlled and uniform flux of evaporated coating species;

The major components of an electromagnetic isotope separator include: a magnetic field for ion-beam diversion/separation of the isotopes, an ion source with its acceleration system, and a collection system for the separated ions.